Thin film synthesis of Ti₃SiC₂ by rapid thermal processing of magnetron-sputtered Ti-C-Si multilayer systems

MAX phase coating could have interesting technical applications in many fields. This paper describes the synthesis of the M_n+1AX_n phase Ti₃SiC₂ by a rapid thermal annealing process of physical vapor deposited Ti-C-Si multilayer thin films on Si (100) and SiO ₂ substrates. Annealing temperatures of 800-1000 °C affected the solid state reaction of titanium, carbon and silicon creating titanium-carbides, -silicides, and Ti₃SiC₂. The film structures and chemical compositions were observed by grazing incidence X-ray diffraction, transmission electron microscopy, and glow discharge optical emission spectroscopy. Analysis after the rapid thermal processing revealed the formation of the polycrystalline M_n+1AX_n phase Ti₃SiC ₂ in coexistence with TiSi₂, TiC and Ti₅Si ₃, even within a 0 s annealing process. This synthesis method has a high potential for the formation of MAX phases as a high temperature electrical contact material.