Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films

J. Andres Guerra, Liz Montañez, Albrecht Winnacker, Francisco De Zela, Roland Weingärtner

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9 Citas (Scopus)

Resumen

The effect of terbium (Tb) doping on the photoluminescence (PL) and cathodoluminescence (CL) spectra of amorphous aluminum nitride (a -AlN) and amorphous silicon nitride (a -SiN) thin films has been investigated for different temperature conditions. The samples were prepared by RF dual magnetron reactive sputtering technique with a Tb concentration of about ∼1 at% An enhancement of the light emission is obtained after thermal annealing treatments following the activation of luminescent centers. Furthermore, the Tb related integrated light emission intensity is reported exhibiting a continuous increase with the samples temperature well below thermal quenching for both materials. This behavior suggests a phonon assisted energy migration mechanism which contributes to the effective energy transfer from the matrix to the Tb ions.

Idioma originalInglés
Páginas (desde-hasta)1183-1186
Número de páginas4
PublicaciónPhysica Status Solidi (C) Current Topics in Solid State Physics
Volumen12
N.º8
DOI
EstadoPublicada - 1 ago. 2015

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