TY - GEN
T1 - The compound oxides based on TiO2and NiO thin films for low temperature gas detection
AU - Kosc, I.
AU - Hotovy, I.
AU - Kompitsas, M.
AU - Grieseler, R.
AU - Wilke, M.
AU - Rehacek, V.
AU - Predanocy, M.
AU - Kups, T.
AU - Spiess, L.
PY - 2010
Y1 - 2010
N2 - The multilayer compound thin films, consisted of metal oxides (TiO 2 and NiO) prepared by dc magnetron sputtering technique, have been studied. The structural, compositional, electrical and gas sensing properties have been investigated by XRD, GDOES and Van der Pauw method considering changes in layout, annealing temperature and addition of Au noble metal catalyst. The Au modified compound oxides exhibit fast response and enhanced sensitivity to hydrogen at low operating temperatures.
AB - The multilayer compound thin films, consisted of metal oxides (TiO 2 and NiO) prepared by dc magnetron sputtering technique, have been studied. The structural, compositional, electrical and gas sensing properties have been investigated by XRD, GDOES and Van der Pauw method considering changes in layout, annealing temperature and addition of Au noble metal catalyst. The Au modified compound oxides exhibit fast response and enhanced sensitivity to hydrogen at low operating temperatures.
UR - http://www.scopus.com/inward/record.url?scp=78651450873&partnerID=8YFLogxK
U2 - 10.1109/ASDAM.2010.5666355
DO - 10.1109/ASDAM.2010.5666355
M3 - Conference contribution
AN - SCOPUS:78651450873
SN - 9781424485758
T3 - Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
SP - 337
EP - 340
BT - Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
T2 - 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Y2 - 25 October 2010 through 27 October 2010
ER -