¹⁰Boron distribution measurement in laser ablated B₄C thin films using (n,α) reaction and LR-115 passive detector

Lateral distribution of the ¹⁰B isotope within a boron carbide film of 550 nm maximum thickness deposited on silicon wafer using pulsed laser deposition technique has been determined taking advantage of the high cross section for (n,α) reaction and nuclear tracks detectors (NTD - LR-115 Kodak Pathé). A radioisotope neutron source (²⁵²Cf, 20 μg) and a 60 × 60 × 80 cm³ graphite cube as moderator produce a relatively uniform thermal neutron field. Details of the passive detector etching process and data processing are included. The track density reveals the boron density spatial distribution. A 3D picture is produced to visualize the boron-10 spatial distribution. The result suggests that a gradient in the boron distribution exists to almost a factor of three. The advantages of the technique are discussed.