TY - JOUR
T1 - Single-photon emission from InGaAs quantum dots grown on (111) GaAs
AU - Stock, Erik
AU - Warming, Till
AU - Ostapenko, Irina
AU - Rodt, Sven
AU - Schliwa, Andrei
AU - Töfflinger, Jan Amaru
AU - Lochmann, Anatol
AU - Toropov, Aleksandr I.
AU - Moshchenko, Sergej A.
AU - Dmitriev, Dimitry V.
AU - Haisler, Vladimir A.
AU - Bimberg, Dieter
PY - 2010
Y1 - 2010
N2 - In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40 μeV down to the determination limit of our setup (10 μeV) was observed.
AB - In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40 μeV down to the determination limit of our setup (10 μeV) was observed.
UR - http://www.scopus.com/inward/record.url?scp=77949348030&partnerID=8YFLogxK
U2 - 10.1063/1.3337097
DO - 10.1063/1.3337097
M3 - Article
AN - SCOPUS:77949348030
SN - 0003-6951
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
M1 - 093112
ER -