Single-photon emission from InGaAs quantum dots grown on (111) GaAs

Erik Stock, Till Warming, Irina Ostapenko, Sven Rodt, Andrei Schliwa, Jan Amaru Töfflinger, Anatol Lochmann, Aleksandr I. Toropov, Sergej A. Moshchenko, Dimitry V. Dmitriev, Vladimir A. Haisler, Dieter Bimberg

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

85 Citas (Scopus)

Resumen

In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40 μeV down to the determination limit of our setup (10 μeV) was observed.

Idioma originalInglés
Número de artículo093112
PublicaciónApplied Physics Letters
Volumen96
N.º9
DOI
EstadoPublicada - 2010
Publicado de forma externa

Huella

Profundice en los temas de investigación de 'Single-photon emission from InGaAs quantum dots grown on (111) GaAs'. En conjunto forman una huella única.

Citar esto