Simultaneous confinement of acoustic phonons and near infrared photons in GaAs/AlAs multilayers by band inversion

Priya Priya, Anne Rodriguez, Omar Ortiz, Aristide Lemaitre, Martin Esmann, Norberto Daniel Lanzillotti-Kimura

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

GaAs/AlAs heterostructures constitute a unique platform for the conception, engineering, and implementation of optophononic systems. In addition to all the accumulated know-how inherited from the optoelectronics industry, a unique coincidence in the contrasts of the optical and acoustic impedances, and the speeds of light and sound, enable a perfect colocalization of the optical electric and acoustic displacement fields. We present the design principles for GaAs/AlAs optophononic heterostructures supporting topological interface modes and further analyse the performance of these structures in the optical and the acoustic domain.

Idioma originalInglés
Título de la publicación alojadaNanoengineering
Subtítulo de la publicación alojadaFabrication, Properties, Optics, Thin Films, and Devices XIX
EditoresBalaji Panchapakesan, Andre-Jean Attias, Andre-Jean Attias, Wounjhang Park
EditorialSPIE
ISBN (versión digital)9781510653887
DOI
EstadoPublicada - 2022
Publicado de forma externa
EventoNanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XIX 2022 - San Diego, Estados Unidos
Duración: 21 ago. 202223 ago. 2022

Serie de la publicación

NombreProceedings of SPIE - The International Society for Optical Engineering
Volumen12202
ISSN (versión impresa)0277-786X
ISSN (versión digital)1996-756X

Conferencia

ConferenciaNanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XIX 2022
País/TerritorioEstados Unidos
CiudadSan Diego
Período21/08/2223/08/22

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