Silicon interface passivation studied by modulated surface photovoltage spectroscopy

J. Dulanto, M. A. Sevillano-Bendezu, R. Grieseler, J. A. Guerra, L. Korte, T. Dittrich, J. A. Tofflinger

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Resumen

We demonstrate that the modulated surface photovoltage spectroscopy (modulated SPS) technique can be applied to investigate interface states in the bandgap, i.e. interface passivation, of crystalline silicon coated with a downshift layer such as hydrogenated aluminum nitride with embedded terbium ions by suppressing straylight with a cut-off filter. Different hydrogen contents influence the surface photovoltage spectra at photon energies below the bandgap of crystalline silicon. Modulated SPS reveals that at higher hydrogen content there is a lower signal and, thus, a lower density of surface defect states. Our experiments show that modulated SPS can become a powerful tool for characterizing defect states at interfaces which cannot be easily studied by other methods.

Idioma originalInglés
Número de artículo012003
PublicaciónJournal of Physics: Conference Series
Volumen1841
N.º1
DOI
EstadoPublicada - 15 mar. 2021
EventoPeruvian Workshop on Solar Energy 2020, JOPES 2020 - Lima, Virtual, Perú
Duración: 25 jun. 202026 jun. 2020

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