Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

R. Grieseler; P. Schaaf; J. A. Guerra Torres; J. Pezoldt; Isabella Gallino; Natallia Duboiskaya; Joachim Döll; Deepshikha Shekhawat; Johannes Reiprich; Marcus Hopfeld; Hauke L. Honig

Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

R. Grieseler, P. Schaaf, J. A. Guerra Torres, J. Pezoldt, Isabella Gallino, Natallia Duboiskaya, Joachim Döll, Deepshikha Shekhawat, Johannes Reiprich, Marcus Hopfeld, Hauke L. Honig

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Resumen

An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

Idioma original	Español
Páginas (desde-hasta)	44-48
Número de páginas	5
Publicación	Materials Science Forum
Volumen	1062
Estado	Publicada - 1 ene. 2022

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title = "Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers",

abstract = "An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.",

author = "R. Grieseler and P. Schaaf and {Guerra Torres}, {J. A.} and J. Pezoldt and Isabella Gallino and Natallia Duboiskaya and Joachim D{\"o}ll and Deepshikha Shekhawat and Johannes Reiprich and Marcus Hopfeld and Honig, {Hauke L.}",

year = "2022",

month = jan,

day = "1",

language = "Espa{\~n}ol",

volume = "1062",

pages = "44--48",

journal = "Materials Science Forum",

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TY - JOUR

T1 - Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

AU - Grieseler, R.

AU - Schaaf, P.

AU - Guerra Torres, J. A.

AU - Pezoldt, J.

AU - Gallino, Isabella

AU - Duboiskaya, Natallia

AU - Döll, Joachim

AU - Shekhawat, Deepshikha

AU - Reiprich, Johannes

AU - Hopfeld, Marcus

AU - Honig, Hauke L.

PY - 2022/1/1

Y1 - 2022/1/1

N2 - An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

AB - An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

UR - https://www.scientific.net/MSF.1062.44

M3 - Artículo

SN - 0255-5476

VL - 1062

SP - 44

EP - 48

JO - Materials Science Forum

JF - Materials Science Forum

ER -