Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

Rolf Grieseler, Isabella Gallino, Natallia Duboiskaya, Joachim Döll, Deepshikha Shekhawat, Johannes Reiprich, Jorge A. Guerra, Marcus Hopfeld, Hauke L. Honig, Peter Schaaf, Jörg Pezoldt

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive mul-tilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

Idioma originalInglés
Título de la publicación alojadaSilicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
EditoresJean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson
EditorialTrans Tech Publications Ltd
Páginas44-48
Número de páginas5
ISBN (versión impresa)9783035727609
DOI
EstadoPublicada - 2022
Evento13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 - Virtual, Online
Duración: 24 oct. 202128 oct. 2021

Serie de la publicación

NombreMaterials Science Forum
Volumen1062 MSF
ISSN (versión impresa)0255-5476
ISSN (versión digital)1662-9752

Conferencia

Conferencia13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
CiudadVirtual, Online
Período24/10/2128/10/21

Huella

Profundice en los temas de investigación de 'Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers'. En conjunto forman una huella única.

Citar esto