@inproceedings{d0dc9e77d2044c27ae7114f980159e32,
title = "Mechanical properties of cubic SiC, GaN and AlN thin films",
abstract = "Cubic polytypes of SiC, GaN and AlN were grown on silicon by molecular beam epitaxy. The mechanical properties of the epitaxial layers were investigated by nanoindentation. For 3C-SiC grown on Si(111) and Si(100) an extremal behaviour of the indentation modulus in dependence on the surface preparation with germanium prior to the carbonization was obtained. The maximum values of the indentation modulus for both Si orientations were achieved at 1 ML Ge.",
keywords = "Cubic III-nitrides, Heteroepitaxy, Indentation modulus, Mechanical properties, Nanoindentation",
author = "J{\"o}rg Pezoldt and Rolf Grieseler and Thorsten Schupp and As, {Donat J.} and Peter Schaaf",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.513",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "513--516",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}