Luminescence of Terbium Ions in an Amorphous Silicon Carbide Based Wide Bandgap Semiconductor Thin Films

G. Gálvez de la Puente; R. Grieseler

Luminescence of Terbium Ions in an Amorphous Silicon Carbide Based Wide Bandgap Semiconductor Thin Films

G. Gálvez de la Puente, R. Grieseler

Sección de Física

Pontifical Catholic Univ. of Peru

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

Resumen

SiC:Tb films were prepared by RF magnetron sputtering. The influence of the sputter parameters temperature and bias potential at the substrate were analysed. The results show that terbium emission can be tuned by changing these parameters.

Idioma original	Inglés
Estado	Publicada - 2024
Evento	2024 Latin America Optics and Photonics Conference, LAOP 2024 - Puerto Vallarta, México Duración: 10 nov. 2024 → 14 nov. 2024

Conferencia

Conferencia	2024 Latin America Optics and Photonics Conference, LAOP 2024
País/Territorio	México
Ciudad	Puerto Vallarta
Período	10/11/24 → 14/11/24

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title = "Luminescence of Terbium Ions in an Amorphous Silicon Carbide Based Wide Bandgap Semiconductor Thin Films",

abstract = "SiC:Tb films were prepared by RF magnetron sputtering. The influence of the sputter parameters temperature and bias potential at the substrate were analysed. The results show that terbium emission can be tuned by changing these parameters.",

author = "{G{\'a}lvez de la Puente}, G. and R. Grieseler",

note = "Publisher Copyright: {\textcopyright} Optica 2024, {\textcopyright} 2024 The Author(s); 2024 Latin America Optics and Photonics Conference, LAOP 2024 ; Conference date: 10-11-2024 Through 14-11-2024",

year = "2024",

language = "English",

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TY - CONF

T1 - Luminescence of Terbium Ions in an Amorphous Silicon Carbide Based Wide Bandgap Semiconductor Thin Films

AU - Gálvez de la Puente, G.

AU - Grieseler, R.

PY - 2024

Y1 - 2024

N2 - SiC:Tb films were prepared by RF magnetron sputtering. The influence of the sputter parameters temperature and bias potential at the substrate were analysed. The results show that terbium emission can be tuned by changing these parameters.

AB - SiC:Tb films were prepared by RF magnetron sputtering. The influence of the sputter parameters temperature and bias potential at the substrate were analysed. The results show that terbium emission can be tuned by changing these parameters.

UR - http://www.scopus.com/inward/record.url?scp=85216535971&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85216535971

T2 - 2024 Latin America Optics and Photonics Conference, LAOP 2024

Y2 - 10 November 2024 through 14 November 2024

ER -

Luminescence of Terbium Ions in an Amorphous Silicon Carbide Based Wide Bandgap Semiconductor Thin Films

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