TY - JOUR
T1 - Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO2 films deposited by DC sputtering
AU - Guillen-Baca, Y. B.
AU - Vilca Huayhua, C. A.
AU - Paz Corrales, K. J.
AU - Carlos-Chilo, A. F.
AU - Aragón, F. F.H.
AU - Mathpal, M. C.
AU - Da Silva, S. W.
AU - Coaquira, J. A.H.
AU - Sucasaire, W.
AU - Guerra, J. A.
AU - Pacheco-Salazar, D. G.
N1 - Publisher Copyright:
© 2019 IOP Publishing Ltd.
PY - 2019/9/4
Y1 - 2019/9/4
N2 - In this work, we present the study of undoped and Fe-doped SnO2 polycrystalline films grown by direct-current sputtering on glass substrates. X-ray diffraction (XRD) analysis revealed that the as-deposited films exhibit an amorphous phase, whereas, after 2 h of thermal annealing at 500 °C, the films showed a rutile-type structure with no evidence of secondary phases. Rietveld refinement analyses of the XRD patterns revealed that the undoped films do not reveal a preferred orientation as is displayed in the bulk system, whilst the Fe-doped films showed a (1 0 1) preferred orientation which is enhanced with the deposition time (film thickness). A detailed analysis revealed a clear dependence of the unit cell volume on the crystallite size. The latter effect was mainly associated with strain effects occurring during the film deposition. Additionally, the growth of columnar-shaped structures was determined by cross-section scanning electron microscopy images. Interesting features of the fundamental absorption were determined via UV-vis spectroscopy. The obtained results revealed a monotonous decrease of the band gap with film thickness, which becomes larger for the Fe-doped SnO2 films and is associated with a change in the residual strain, in good agreement with the XRD analysis and Raman spectroscopy measurements.
AB - In this work, we present the study of undoped and Fe-doped SnO2 polycrystalline films grown by direct-current sputtering on glass substrates. X-ray diffraction (XRD) analysis revealed that the as-deposited films exhibit an amorphous phase, whereas, after 2 h of thermal annealing at 500 °C, the films showed a rutile-type structure with no evidence of secondary phases. Rietveld refinement analyses of the XRD patterns revealed that the undoped films do not reveal a preferred orientation as is displayed in the bulk system, whilst the Fe-doped films showed a (1 0 1) preferred orientation which is enhanced with the deposition time (film thickness). A detailed analysis revealed a clear dependence of the unit cell volume on the crystallite size. The latter effect was mainly associated with strain effects occurring during the film deposition. Additionally, the growth of columnar-shaped structures was determined by cross-section scanning electron microscopy images. Interesting features of the fundamental absorption were determined via UV-vis spectroscopy. The obtained results revealed a monotonous decrease of the band gap with film thickness, which becomes larger for the Fe-doped SnO2 films and is associated with a change in the residual strain, in good agreement with the XRD analysis and Raman spectroscopy measurements.
KW - change in the strain
KW - columnar films
KW - reduction of the optical band gap
KW - thickness increase
KW - transparent semiconductor oxide
UR - http://www.scopus.com/inward/record.url?scp=85073115529&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/ab3968
DO - 10.1088/1361-6463/ab3968
M3 - Article
AN - SCOPUS:85073115529
SN - 0022-3727
VL - 52
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 46
M1 - 465306
ER -