In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs

Irina A. Ostapenko, Erik Stock, Till Warming, Sven Rodt, Andrei Schliwa, Murat Öztürk, Jan Amaru Töfflinger, Anatol Lochmann, Dieter Bimberg, A. I. Toropov, S. A. Moshchenko, D. V. Dmitriev, V. A. Haisler

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

4 Citas (Scopus)


Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions.

Idioma originalInglés
Número de artículo012003
PublicaciónJournal of Physics: Conference Series
EstadoPublicada - 2010
Publicado de forma externa


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