In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs

Irina A. Ostapenko; Erik Stock; Till Warming; Sven Rodt; Andrei Schliwa; Murat Öztürk; Jan Amaru Töfflinger; Anatol Lochmann; Dieter Bimberg; A. I. Toropov; S. A. Moshchenko; D. V. Dmitriev; V. A. Haisler

doi:10.1088/1742-6596/244/1/012003

In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs

Irina A. Ostapenko, Erik Stock, Till Warming, Sven Rodt, Andrei Schliwa, Murat Öztürk, Jan Amaru Töfflinger, Anatol Lochmann, Dieter Bimberg, A. I. Toropov, S. A. Moshchenko, D. V. Dmitriev, V. A. Haisler

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4 Citas (Scopus)

Resumen

Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions.

Idioma original	Inglés
Número de artículo	012003
Publicación	Journal of Physics: Conference Series
Volumen	244
DOI	https://doi.org/10.1088/1742-6596/244/1/012003
Estado	Publicada - 2010
Publicado de forma externa	Sí

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Ostapenko, I. A., Stock, E., Warming, T., Rodt, S., Schliwa, A., Öztürk, M., Töfflinger, J. A., Lochmann, A., Bimberg, D., Toropov, A. I., Moshchenko, S. A., Dmitriev, D. V., & Haisler, V. A. (2010). In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs. Journal of Physics: Conference Series, 244, Artículo 012003. https://doi.org/10.1088/1742-6596/244/1/012003

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title = "In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs",

abstract = "Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions.",

author = "Ostapenko, {Irina A.} and Erik Stock and Till Warming and Sven Rodt and Andrei Schliwa and Murat {\"O}zt{\"u}rk and T{\"o}fflinger, {Jan Amaru} and Anatol Lochmann and Dieter Bimberg and Toropov, {A. I.} and Moshchenko, {S. A.} and Dmitriev, {D. V.} and Haisler, {V. A.}",

year = "2010",

doi = "10.1088/1742-6596/244/1/012003",

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volume = "244",

journal = "Journal of Physics: Conference Series",

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T1 - In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs

AU - Ostapenko, Irina A.

AU - Stock, Erik

AU - Warming, Till

AU - Rodt, Sven

AU - Schliwa, Andrei

AU - Öztürk, Murat

AU - Töfflinger, Jan Amaru

AU - Lochmann, Anatol

AU - Bimberg, Dieter

AU - Toropov, A. I.

AU - Moshchenko, S. A.

AU - Dmitriev, D. V.

AU - Haisler, V. A.

PY - 2010

Y1 - 2010

N2 - Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions.

AB - Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions.

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U2 - 10.1088/1742-6596/244/1/012003

DO - 10.1088/1742-6596/244/1/012003

M3 - Article

AN - SCOPUS:78651231886

SN - 1742-6588

VL - 244

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 012003

ER -

In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs

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