Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

J. Dulanto; S. Fengler; M. A. Sevillano-Bendezú; R. Grieseler; J. A. Guerra; J. A. Töfflinger; Th Dittrich

doi:10.1016/j.tsf.2022.139474

Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

J. Dulanto, S. Fengler, M. A. Sevillano-Bendezú, R. Grieseler, J. A. Guerra, J. A. Töfflinger, Th Dittrich

Sección de Física

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

2 Citas (Scopus)

Resumen

In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

Idioma original	Inglés
Número de artículo	139474
Publicación	Thin Solid Films
Volumen	759
DOI	https://doi.org/10.1016/j.tsf.2022.139474
Estado	Publicada - 1 oct. 2022

Acceder al documento

10.1016/j.tsf.2022.139474

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{14f1722099b74919acb7fc39b5591d51,

title = "Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study",

abstract = "In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.",

keywords = "Aluminum oxynitride, Defects, Passivation, Silicon surfaces, Surface photovoltage, Transient surface photovoltage spectroscopy",

author = "J. Dulanto and S. Fengler and Sevillano-Bendez{\'u}, {M. A.} and R. Grieseler and Guerra, {J. A.} and T{\"o}fflinger, {J. A.} and Th Dittrich",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2022.139474",

language = "English",

volume = "759",

journal = "Thin Solid Films",

issn = "0040-6090",

}

TY - JOUR

T1 - Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces

T2 - A transient surface photovoltage spectroscopy study

AU - Dulanto, J.

AU - Fengler, S.

AU - Sevillano-Bendezú, M. A.

AU - Grieseler, R.

AU - Guerra, J. A.

AU - Töfflinger, J. A.

AU - Dittrich, Th

PY - 2022/10/1

Y1 - 2022/10/1

N2 - In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

AB - In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

KW - Aluminum oxynitride

KW - Defects

KW - Passivation

KW - Silicon surfaces

KW - Surface photovoltage

KW - Transient surface photovoltage spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85138100891&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2022.139474

DO - 10.1016/j.tsf.2022.139474

M3 - Article

AN - SCOPUS:85138100891

SN - 0040-6090

VL - 759

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 139474

ER -

Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto