High frequency class e design methodologies

P. Colantonio, F. Giannini, R. Giofrè, M. A. Yarleque Medina, D. Schreurs, B. Nauwelaers

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

14 Citas (Scopus)

Resumen

Design criteria of Class E amplifiers are reviewed and extended for high frequency application. In particular, starting from classical Class-E formulas an additional tuning on fundamental output load becomes mandatory to take into account practical limitations arising in high frequency applications. Two examples of Class E amplifier designs for X-Band application (GaAs based) and C-Band (GaN based) are presented.

Idioma originalInglés
Título de la publicación alojadaGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Páginas329-332
Número de páginas4
EstadoPublicada - 2005
Publicado de forma externa
EventoGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, Francia
Duración: 3 oct. 20054 oct. 2005

Serie de la publicación

NombreGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volumen2005

Conferencia

ConferenciaGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
País/TerritorioFrancia
CiudadParis
Período3/10/054/10/05

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