Four-port deembedding technique for FET devices mounted in hybrid test fixture

M. A.Yarleque Medina, D. Schreurs, B. Nauwelaers

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

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Resumen

High frequency devices aimed for power applications cannot be characterized by on-wafer measurements due to power dissipation constraints. Therefore characterization using test fixture is necessary. Latest techniques applied to onwafer devices use a four-port characterization of the extrinsic network surrounding the device. Nevertheless, this cannot be applied straightforwardly to the test fixture case due to the fact that the ground reference of the device is not the same as the measurement, and this effect increases with frequency. A fiveport definition would lead to an accurate characterization, but with the increase of the complexity of the problem. This paper presents an alternative technique based on four-port deembedding technique with a correction of the local ground effect by using two cold-FET measurements and a simplification of the four-port matrix model.

Idioma originalInglés
Título de la publicación alojadaProceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006
EditorialIEEE Computer Society
Páginas464-467
Número de páginas4
ISBN (versión impresa)2960055187, 9782960055184
DOI
EstadoPublicada - 2006
Publicado de forma externa
Evento1st European Microwave Integrated Circuits Conference, EuMIC 2006 - Manchester, Reino Unido
Duración: 10 set. 200612 set. 2006

Serie de la publicación

NombreProceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Conferencia

Conferencia1st European Microwave Integrated Circuits Conference, EuMIC 2006
País/TerritorioReino Unido
CiudadManchester
Período10/09/0612/09/06

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