Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering

K. Y. Tucto Salinas, L. F. Flores Escalante, J. A. Guerra Torres, R. Grieseler, T. Kups, J. Pezoldt, A. Osvet, M. Batentschuk, R. Weingärtner

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

5 Citas (Scopus)

Resumen

Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.

Idioma originalInglés
Título de la publicación alojadaMaterial Science and Engineering Technology V
EditoresYunqiu He, Ramesh K. Agarwal, Jean-Jacques Delaunay
EditorialTrans Tech Publications Ltd
Páginas299-302
Número de páginas4
ISBN (versión impresa)9783035710281
DOI
EstadoPublicada - 2017
Evento5th International Conference on Material Science and Engineering Technology, ICMSET 2016 - Tokyo, Japón
Duración: 29 oct. 201631 oct. 2016

Serie de la publicación

NombreMaterials Science Forum
Volumen890 MSF
ISSN (versión impresa)0255-5476
ISSN (versión digital)1662-9752

Conferencia

Conferencia5th International Conference on Material Science and Engineering Technology, ICMSET 2016
País/TerritorioJapón
CiudadTokyo
Período29/10/1631/10/16

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