Effect of nitrogen dilution in the optical properties of amorphous SiC thin films

Liz Montañez, J. Andrés Guerra, Francisco De Zela, Albrecht Winnaker, Roland Weingärtner

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

The effect of the nitrogen dilution on the optical and vibrational properties of amorphous silicon carbide (a-SiC) and silicon oxycarbide (a-SiCO) layers have been studied. The films were prepared by radio frequency (rf) reactive magnetron sputtering using an atmosphere mixture of argon (Ar) and nitrogen (N2). The oxygen (O2) was incorporated according to the base pressure used of each deposition process. The optical and vibrational properties of the films were characterized by means of UV/VIS transmittance measurements and Fourier transform infrared spectroscopy (FTIR), respectively. A relationship between the variation of the optical bandgap and the increase or quench of vibrational modes is established. This analysis reveals that the increase of nitrogen in both host matrices a-SiC and a-SiCO induced the formation of C=N and C≡N bonds thus reducing the bandgap of the material.

Idioma originalInglés
Título de la publicación alojadaSilicon Carbide and Related Materials 2014
EditoresDidier Chaussende, Gabriel Ferro
EditorialTrans Tech Publications Ltd
Páginas217-220
Número de páginas4
ISBN (versión impresa)9783038354789
DOI
EstadoPublicada - 2015
EventoEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, Francia
Duración: 21 set. 201425 set. 2014

Serie de la publicación

NombreMaterials Science Forum
Volumen821-823
ISSN (versión impresa)0255-5476
ISSN (versión digital)1662-9752

Conferencia

ConferenciaEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
País/TerritorioFrancia
CiudadGrenoble
Período21/09/1425/09/14

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