@inproceedings{716fc78913b84061885c3b4da140c483,
title = "Design of a CMOS cross-coupled voltage doubler",
abstract = "This paper describes a design procedure for a CMOS voltage doubler. Test-bench circuit are used to verify the performance of the design. Several equations that relate performance parameters with design variables are presented. This set of equations considers both transient and steady state behavior. Various known energy losses such as switching and conduction losses were taken into account for transistors sizing. The effects of the characteristics of the pump capacitors are analyzed and evaluated through electrical simulations. A design example based on AMS 0.35μm process is presented.",
keywords = "charge pump, control-gate circuit, cross-coupled, design procedure, losses energy, voltage doubler",
author = "Luis Rodriguez and Erick Raygada and Carlos Silva and Julio Saldana",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE ANDESCON, ANDESCON 2016 ; Conference date: 19-10-2016 Through 21-10-2016",
year = "2017",
month = jan,
day = "27",
doi = "10.1109/ANDESCON.2016.7836258",
language = "English",
series = "Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016",
}