Comparison of growth methods for Si/SiO 2 nanostructures as nanodot hetero-emitters for photovoltaic applications

Maurizio Roczen, Enno Malguth, Martin Schade, Andreas Schöpke, Abdelazize Laades, Michael Blech, Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Manfred Schmidt, Hartmut S. Leipner, Lars Korte, Bernd Rech

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

5 Citas (Scopus)


Two different growth mechanisms are compared for the fabrication of Si/SiO 2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiO x (a-SiO x) films with 0 < x < 1.3 and (2) the dewetting of thin amorphous silicon (a-Si) layers. The grown layers are investigated with regard to their structural properties, their passivation quality for c-Si wafer substrates and their electrical properties in order to evaluate their suitability as a nanodot hetero-emitter. While by layer decomposition, no passivating nanodots could be formed, the dewetting process allows fabricating nanodot passivation layers at temperatures as low as 600 °C. The series resistance through Ag/[Si-nanodots in SiO 2]/c-Si/Al structures for dewetting is similar to nanostructured silicon rich SiO x films. Still, a nanodot hetero-emitter which exhibits both a satisfying passivation of the substrate and induces a high band bending by doping at the same time could not be fabricated yet.

Idioma originalInglés
Páginas (desde-hasta)2253-2256
Número de páginas4
PublicaciónJournal of Non-Crystalline Solids
EstadoPublicada - 1 set. 2012
Publicado de forma externa


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