Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) 1-x(AlN)x doped with terbium and its optical emission properties

R. Weingärtner; J. A. Guerra Torres; O. Erlenbach; G. Gálvez De La Puente; F. De Zela; A. Winnacker

doi:10.1016/j.mseb.2010.03.033

Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) _1-x(AlN)_x doped with terbium and its optical emission properties

R. Weingärtner, J. A. Guerra Torres, O. Erlenbach, G. Gálvez De La Puente, F. De Zela, A. Winnacker

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

22 Citas (Scopus)

Resumen

Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)_1-x(AlN)_x doped with terbium were grown by trial rf magnetron sputtering on CaF₂ and glass substrates. The optical bandgap of the films in dependence of the composition x has been determined from transmission measurements using the (αhν)² versus energy plot and the Tauc-plot. The bandgap varies from 2.2 eV for x = 0 (SiC) to 4.7 eV for x = 0.94 (almost pure AlN) and can be described by Vegard's law using the bowing parameter (3.18 ± 1.01) eV. Cathodoluminescence measurements show the typical terbium emission pattern. Thermal activation of the thin films with isochronical annealing from 300 °C to 1150 °C leads to strong increase of the emission with an optimal annealing temperature of 1100 °C.

Idioma original	Inglés
Páginas (desde-hasta)	114-118
Número de páginas	5
Publicación	Materials Science and Engineering: B
Volumen	174
N.º	1-3
DOI	https://doi.org/10.1016/j.mseb.2010.03.033
Estado	Publicada - 25 oct. 2010

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title = "Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) 1-x(AlN)x doped with terbium and its optical emission properties",

abstract = "Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x doped with terbium were grown by trial rf magnetron sputtering on CaF2 and glass substrates. The optical bandgap of the films in dependence of the composition x has been determined from transmission measurements using the (αhν)2 versus energy plot and the Tauc-plot. The bandgap varies from 2.2 eV for x = 0 (SiC) to 4.7 eV for x = 0.94 (almost pure AlN) and can be described by Vegard's law using the bowing parameter (3.18 ± 1.01) eV. Cathodoluminescence measurements show the typical terbium emission pattern. Thermal activation of the thin films with isochronical annealing from 300 °C to 1150 °C leads to strong increase of the emission with an optimal annealing temperature of 1100 °C.",

keywords = "Aluminum nitride, Optical properties, Rare earths, Silicon carbide, Thin films",

author = "R. Weing{\"a}rtner and {Guerra Torres}, {J. A.} and O. Erlenbach and {G{\'a}lvez De La Puente}, G. and {De Zela}, F. and A. Winnacker",

year = "2010",

month = oct,

day = "25",

doi = "10.1016/j.mseb.2010.03.033",

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journal = "Materials Science and Engineering: B",

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Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) _1-x(AlN)_x doped with terbium and its optical emission properties. / Weingärtner, R.; Guerra Torres, J. A.; Erlenbach, O. et al.
En: Materials Science and Engineering: B, Vol. 174, N.º 1-3, 25.10.2010, p. 114-118.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

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AU - Weingärtner, R.

AU - Guerra Torres, J. A.

AU - Erlenbach, O.

AU - Gálvez De La Puente, G.

AU - De Zela, F.

AU - Winnacker, A.

PY - 2010/10/25

Y1 - 2010/10/25

N2 - Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x doped with terbium were grown by trial rf magnetron sputtering on CaF2 and glass substrates. The optical bandgap of the films in dependence of the composition x has been determined from transmission measurements using the (αhν)2 versus energy plot and the Tauc-plot. The bandgap varies from 2.2 eV for x = 0 (SiC) to 4.7 eV for x = 0.94 (almost pure AlN) and can be described by Vegard's law using the bowing parameter (3.18 ± 1.01) eV. Cathodoluminescence measurements show the typical terbium emission pattern. Thermal activation of the thin films with isochronical annealing from 300 °C to 1150 °C leads to strong increase of the emission with an optimal annealing temperature of 1100 °C.

AB - Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x doped with terbium were grown by trial rf magnetron sputtering on CaF2 and glass substrates. The optical bandgap of the films in dependence of the composition x has been determined from transmission measurements using the (αhν)2 versus energy plot and the Tauc-plot. The bandgap varies from 2.2 eV for x = 0 (SiC) to 4.7 eV for x = 0.94 (almost pure AlN) and can be described by Vegard's law using the bowing parameter (3.18 ± 1.01) eV. Cathodoluminescence measurements show the typical terbium emission pattern. Thermal activation of the thin films with isochronical annealing from 300 °C to 1150 °C leads to strong increase of the emission with an optimal annealing temperature of 1100 °C.

KW - Aluminum nitride

KW - Optical properties

KW - Rare earths

KW - Silicon carbide

KW - Thin films

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