Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) 1-x(AlN)x doped with terbium and its optical emission properties

R. Weingärtner, J. A. Guerra Torres, O. Erlenbach, G. Gálvez De La Puente, F. De Zela, A. Winnacker

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

21 Citas (Scopus)

Resumen

Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x doped with terbium were grown by trial rf magnetron sputtering on CaF2 and glass substrates. The optical bandgap of the films in dependence of the composition x has been determined from transmission measurements using the (αhν)2 versus energy plot and the Tauc-plot. The bandgap varies from 2.2 eV for x = 0 (SiC) to 4.7 eV for x = 0.94 (almost pure AlN) and can be described by Vegard's law using the bowing parameter (3.18 ± 1.01) eV. Cathodoluminescence measurements show the typical terbium emission pattern. Thermal activation of the thin films with isochronical annealing from 300 °C to 1150 °C leads to strong increase of the emission with an optimal annealing temperature of 1100 °C.

Idioma originalInglés
Páginas (desde-hasta)114-118
Número de páginas5
PublicaciónMaterials Science and Engineering: B
Volumen174
N.º1-3
DOI
EstadoPublicada - 25 oct. 2010

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