Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

J. A. Guerra, K. Tucto, L. M. Montañez, F. De Zela, J. A. Töfflinger, A. Winnaker, R. Weingärtner

Producción científica: Contribución a una revistaArtículorevisión exhaustiva


The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

Idioma originalInglés
Páginas (desde-hasta)2689-2694
Número de páginas6
PublicaciónMRS Advances
EstadoPublicada - 2016


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