Impact of rare-earth ions incorporation in high mobility wide bandgap degenerated semiconductors: study considering many-body effects and advanced optical dispersion models

The aim of this research project proposal is to study the optoelectronic and electrical properties of IZO, IGZO and IZrO thin films and assess the impact of rare-earth (RE) incorporation in their structure. We plan on using recently developed advanced optical dispersion models for the fundamental absorption, as well as appropriate dispersion models for the free carrier absorption considering the impact of distinct electronic scattering mechanisms through a dynamical resistivity analysis. We expect to determine the conduction and valence band-edge curvature trough an effective masses analysis combining optical and electrical measurements. Subsequently, a crystal field analysis to assess the symmetry of the surrounding environment of the RE ions will be performed on the RE-related light-emission, after activation. Further investigation will follow to engineer the RE light-emitting properties of these materials while trying to keep their most attractive properties such as high optical transparency in the visible range and low resistivity. We believe that this research will shed light on the capabilities of transparent conductive oxides (TCOs) to host optically active RE ions without dramatically compromising their optical and electrical properties. As well as on revisiting the Burstein-Moss shift and electron-electron and electron-impurities interactions and their renormalization effect in the framework of current optical dispersion models for high carrier mobility TCOs such as IZO, IGZO and IZrO thin films.

The aim of this research project proposal is to study the optoelectronic and electrical properties of IZO, IGZO and IZrO thin films and assess the impact of rare-earth (RE) incorporation in their structure. We plan on using recently developed advanced optical dispersion models for the fundamental absorption, as well as appropriate dispersion models for the free carrier absorption considering the impact of distinct electronic scattering mechanisms through a dynamical resistivity analysis

• To synthesize, characterize and tailor the structural, electrical, and optoelectronic properties of high mobility IZO, IGZO and GZO thin films grown by radio frequency magnetron sputtering. • To evaluate and model the optoelectronic properties for carrier concentrations above the Mott transition and contrast parabolic and non-parabolic approximations for the determination of the conduction and valence effective masses • To synthesize, characterize and tailor the optoelectronic properties of Tb and Tm ions embedded independently in IZO, IGZO and GZO thin films grown by radio frequency magnetron sputtering. • To assess the thermal activation of RE-related luminescence and the compromise on the host optoelectronic properties. • To evaluate and attempt to model the indirect host-mediated excitation mechanism of rare earth (RE) ions. Additionally, the investigation aims to analyze the surrounding atomic environment of these ions by conducting crystal field analysis from their emission spectrum.

Tasks 1 and 2: Theoretical model assessment and sample preparation Tasks 3 to 7: Optical, light emission, electrical and structural properties characterization. Assessment of the indirect excitation and crystal field analysis. Data analysis and manuscript preparation.

Investigacion basica

Multidisciplinario

ADMINISTRADO

LIMA - LIMA - SAN MIGUEL

• 14 — Ciencias e ingeniería de los materiales

Ciencias naturales - Física y Astronomía - Física de la materia condensada

AIR FORCE OFFICE OF SCIENTIFIC RESEARCH