Bandgap engineering and passivation properties of amorphous SiNx and SiNx:O:H grown by RF-magnetron sputtering

The purpose of this ene year project is to investigate in detail the optical and passivation properties of SiNx and SiNx:O:H layers grown en e-Si and fused silica substrates. This includes the effects of wetchemical pre-treatment of the e-Si Surface, of different deposition parameters and of different postdeposition thermal treatments on the charge formation, en the charge trapping mechanisms and en the chemical passivation properties.

• Deposit a-SiNx and a-SiNx:O:H with different thicknesses and under distinct nitrogen dilution conditions on e-Si and fused silica substrates. • Perform Hf-CV measurements to determine the chemical and field effect passivation quality at the e- Si/a-SiNx and c-Si/a-SiNx:O:H interfaces and their dependence with the nitrogen concentration and thi • Determine the optical parameters such the optical bandgap and Urbach energy from the transmittance spectra. • Evalute the effect of the oxygen and hydrogen incorporation on the films in comparison with the previous a-SiNx. • Perfom FTIR measurements to determine the formation of the distinct bonds and determine the bonddensity as it has been previously reported fer a-SiC:H in [Gue16]. • Determine the effect of thermal annealing and firing treatments on the passivation and optical properties of both materials.

Investigacion basica

Disciplinario

PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ