Electrically tunable silicon-organic metasurface as demultiplexer for wavelength-division multiplexing systems

Through numerical simulations, we have demonstrated the electrical tunability of a silicon–organic metasurface that may be useful for optical-communication systems with wavelength-division multiplexing. We began with a nonintuitive geometry and performed topological optimization of a meta-atom comprising a 20 × 20 -variable silicon-on-insulator grid, with electrical tunability arising from a stable electro-optic polymer named JRD1. The controlling electric potential was taken to be applied via two electrodes made of indium-doped tin oxide. A tunability rate of 0.55 nm V − 1 in the optical-communication E and S bands was predicted, with the inter-channel crosstalk between adjacent channels ranging from 6 to 14 dB for 45 deg angle of incidence. The proposed metasurface should perform robustly with respect to the variation of the angle of incidence.

Through numerical simulations, we have demonstrated the electrical tunability of a silicon-organic metasurface that may be useful for optical-communication systems with wavelength-division multiplexing. We began with a nonintuitive geometry and performed topological optimization of a meta-atom comprising a 20×20-variable silicon-on-insulator grid, with electrical tunability arising from a stable electro-optic polymer named JRD1. The controlling electric potential was taken to be applied via two electrodes made of indium-doped tin oxide. A tunability rate of 0.55 nm V-1 in the optical-communication E and S bands was predicted, with the inter-channel crosstalk between adjacent channels ranging from 6 to 14 dB for 45 deg angle of incidence. The proposed metasurface should perform robustly with respect to the variation of the angle of incidence.