Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films

J. Andres Guerra, Liz Montañez, Albrecht Winnacker, Francisco De Zela, Roland Weingärtner

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The effect of terbium (Tb) doping on the photoluminescence (PL) and cathodoluminescence (CL) spectra of amorphous aluminum nitride (a -AlN) and amorphous silicon nitride (a -SiN) thin films has been investigated for different temperature conditions. The samples were prepared by RF dual magnetron reactive sputtering technique with a Tb concentration of about ∼1 at% An enhancement of the light emission is obtained after thermal annealing treatments following the activation of luminescent centers. Furthermore, the Tb related integrated light emission intensity is reported exhibiting a continuous increase with the samples temperature well below thermal quenching for both materials. This behavior suggests a phonon assisted energy migration mechanism which contributes to the effective energy transfer from the matrix to the Tb ions.

Original languageEnglish
Pages (from-to)1183-1186
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number8
DOIs
StatePublished - 1 Aug 2015

Keywords

  • Cathodoluminescence
  • Photoluminescence
  • Temperature dependent
  • Terbium
  • Thermal activation

Fingerprint

Dive into the research topics of 'Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films'. Together they form a unique fingerprint.

Cite this