@inproceedings{58b289d293e54f9f8fbc0e35f76b847e,
title = "Thermal activation and cathodoluminescence measurements of Tb 3+-doped a-(SiC)1-x(AlN)x thin films",
abstract = "We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.",
keywords = "Aluminum nitride, Annealing, Bandgap engineering, Cathodoluminescence, Rare earths",
author = "O. Erlenbach and G. G{\'a}lvez and Guerra, {J. A.} and {De Zela}, F. and R. Weing{\"a}rtner and A. Winnacker",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.459",
language = "English",
isbn = "0878492798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "459--462",
booktitle = "Silicon Carbide and Related Materials 2009",
note = "13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
}