Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

Rolf Grieseler; Isabella Gallino; Natallia Duboiskaya; Joachim Döll; Deepshikha Shekhawat; Johannes Reiprich; Jorge A. Guerra; Marcus Hopfeld; Hauke L. Honig; Peter Schaaf; Jörg Pezoldt

doi:10.4028/p-7u1v90

Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

Rolf Grieseler, Isabella Gallino, Natallia Duboiskaya, Joachim Döll, Deepshikha Shekhawat, Johannes Reiprich, Jorge A. Guerra, Marcus Hopfeld, Hauke L. Honig, Peter Schaaf, Jörg Pezoldt

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive mul-tilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
Editors	Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson
Publisher	Trans Tech Publications Ltd
Pages	44-48
Number of pages	5
ISBN (Print)	9783035727609
DOIs	https://doi.org/10.4028/p-7u1v90
State	Published - 2022
Event	13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 - Virtual, Online Duration: 24 Oct 2021 → 28 Oct 2021

Publication series

Name	Materials Science Forum
Volume	1062 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
City	Virtual, Online
Period	24/10/21 → 28/10/21

Keywords

X-ray diffraction
differential scanning calorimetry
phase transition
reaction enthalpy
reactive materials

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10.4028/p-7u1v90

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Grieseler, R., Gallino, I., Duboiskaya, N., Döll, J., Shekhawat, D., Reiprich, J., Guerra, J. A., Hopfeld, M., Honig, H. L., Schaaf, P., & Pezoldt, J. (2022). Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers. In J. F. Michaud, L. V. Phung, D. Alquier, & D. Planson (Eds.), Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (pp. 44-48). (Materials Science Forum; Vol. 1062 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/p-7u1v90

Grieseler, Rolf ; Gallino, Isabella ; Duboiskaya, Natallia et al. / Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers. Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. editor / Jean François Michaud ; Luong Viet Phung ; Daniel Alquier ; Dominique Planson. Trans Tech Publications Ltd, 2022. pp. 44-48 (Materials Science Forum).

@inproceedings{d078cccfdc7f4cd99cdb757e660e1bdd,

title = "Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers",

abstract = "An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive mul-tilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.",

keywords = "X-ray diffraction, differential scanning calorimetry, phase transition, reaction enthalpy, reactive materials",

author = "Rolf Grieseler and Isabella Gallino and Natallia Duboiskaya and Joachim D{\"o}ll and Deepshikha Shekhawat and Johannes Reiprich and Guerra, \{Jorge A.\} and Marcus Hopfeld and Honig, \{Hauke L.\} and Peter Schaaf and J{\"o}rg Pezoldt",

note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.; 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 ; Conference date: 24-10-2021 Through 28-10-2021",

year = "2022",

doi = "10.4028/p-7u1v90",

language = "English",

isbn = "9783035727609",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "44--48",

editor = "Michaud, \{Jean Fran{\c c}ois\} and Phung, \{Luong Viet\} and Daniel Alquier and Dominique Planson",

booktitle = "Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021",

}

Grieseler, R, Gallino, I, Duboiskaya, N, Döll, J, Shekhawat, D, Reiprich, J, Guerra, JA, Hopfeld, M, Honig, HL, Schaaf, P & Pezoldt, J 2022, Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers. in JF Michaud, LV Phung, D Alquier & D Planson (eds), Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. Materials Science Forum, vol. 1062 MSF, Trans Tech Publications Ltd, pp. 44-48, 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Virtual, Online, 24/10/21. https://doi.org/10.4028/p-7u1v90

Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers. / Grieseler, Rolf; Gallino, Isabella; Duboiskaya, Natallia et al.
Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. ed. / Jean François Michaud; Luong Viet Phung; Daniel Alquier; Dominique Planson. Trans Tech Publications Ltd, 2022. p. 44-48 (Materials Science Forum; Vol. 1062 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

AU - Grieseler, Rolf

AU - Gallino, Isabella

AU - Duboiskaya, Natallia

AU - Döll, Joachim

AU - Shekhawat, Deepshikha

AU - Reiprich, Johannes

AU - Guerra, Jorge A.

AU - Hopfeld, Marcus

AU - Honig, Hauke L.

AU - Schaaf, Peter

AU - Pezoldt, Jörg

PY - 2022

Y1 - 2022

N2 - An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive mul-tilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

AB - An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive mul-tilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

KW - X-ray diffraction

KW - differential scanning calorimetry

KW - phase transition

KW - reaction enthalpy

KW - reactive materials

UR - https://www.scopus.com/pages/publications/85134207706

U2 - 10.4028/p-7u1v90

DO - 10.4028/p-7u1v90

M3 - Conference contribution

AN - SCOPUS:85134207706

SN - 9783035727609

T3 - Materials Science Forum

SP - 44

EP - 48

BT - Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021

A2 - Michaud, Jean François

A2 - Phung, Luong Viet

A2 - Alquier, Daniel

A2 - Planson, Dominique

PB - Trans Tech Publications Ltd

T2 - 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021

Y2 - 24 October 2021 through 28 October 2021

ER -

Grieseler R, Gallino I, Duboiskaya N, Döll J, Shekhawat D, Reiprich J et al. Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers. In Michaud JF, Phung LV, Alquier D, Planson D, editors, Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. Trans Tech Publications Ltd. 2022. p. 44-48. (Materials Science Forum). doi: 10.4028/p-7u1v90

Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

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