TY - JOUR
T1 - Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
AU - Grieseler, R.
AU - Schaaf, P.
AU - Guerra Torres, J. A.
AU - Pezoldt, J.
AU - Gallino, Isabella
AU - Duboiskaya, Natallia
AU - Döll, Joachim
AU - Shekhawat, Deepshikha
AU - Reiprich, Johannes
AU - Hopfeld, Marcus
AU - Honig, Hauke L.
PY - 2022/1/1
Y1 - 2022/1/1
N2 - An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.
AB - An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.
UR - https://www.scientific.net/MSF.1062.44
M3 - Artículo
SN - 0255-5476
VL - 1062
SP - 44
EP - 48
JO - Materials Science Forum
JF - Materials Science Forum
ER -