Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

J. Dulanto; S. Fengler; M. A. Sevillano-Bendezú; R. Grieseler; J. A. Guerra; J. A. Töfflinger; Th Dittrich

doi:10.1016/j.tsf.2022.139474

Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

J. Dulanto, S. Fengler, M. A. Sevillano-Bendezú, R. Grieseler, J. A. Guerra, J. A. Töfflinger, Th Dittrich

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Abstract

In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

Original language	English
Article number	139474
Journal	Thin Solid Films
Volume	759
DOIs	https://doi.org/10.1016/j.tsf.2022.139474
State	Published - 1 Oct 2022

Keywords

Aluminum oxynitride
Defects
Passivation
Silicon surfaces
Surface photovoltage
Transient surface photovoltage spectroscopy

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10.1016/j.tsf.2022.139474

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title = "Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study",

abstract = "In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.",

keywords = "Aluminum oxynitride, Defects, Passivation, Silicon surfaces, Surface photovoltage, Transient surface photovoltage spectroscopy",

author = "J. Dulanto and S. Fengler and Sevillano-Bendez{\'u}, {M. A.} and R. Grieseler and Guerra, {J. A.} and T{\"o}fflinger, {J. A.} and Th Dittrich",

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year = "2022",

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doi = "10.1016/j.tsf.2022.139474",

language = "English",

volume = "759",

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TY - JOUR

T1 - Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces

T2 - A transient surface photovoltage spectroscopy study

AU - Dulanto, J.

AU - Fengler, S.

AU - Sevillano-Bendezú, M. A.

AU - Grieseler, R.

AU - Guerra, J. A.

AU - Töfflinger, J. A.

AU - Dittrich, Th

PY - 2022/10/1

Y1 - 2022/10/1

N2 - In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

AB - In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

KW - Aluminum oxynitride

KW - Defects

KW - Passivation

KW - Silicon surfaces

KW - Surface photovoltage

KW - Transient surface photovoltage spectroscopy

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U2 - 10.1016/j.tsf.2022.139474

DO - 10.1016/j.tsf.2022.139474

M3 - Article

AN - SCOPUS:85138100891

SN - 0040-6090

VL - 759

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 139474

ER -

Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

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Keywords

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