High frequency class e design methodologies

P. Colantonio, F. Giannini, R. Giofrè, M. A. Yarleque Medina, D. Schreurs, B. Nauwelaers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

Design criteria of Class E amplifiers are reviewed and extended for high frequency application. In particular, starting from classical Class-E formulas an additional tuning on fundamental output load becomes mandatory to take into account practical limitations arising in high frequency applications. Two examples of Class E amplifier designs for X-Band application (GaAs based) and C-Band (GaN based) are presented.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages329-332
Number of pages4
StatePublished - 2005
Externally publishedYes
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 3 Oct 20054 Oct 2005

Publication series

NameGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume2005

Conference

ConferenceGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Country/TerritoryFrance
CityParis
Period3/10/054/10/05

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