Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design

Manuel Yarlequé; Dominique M.M.P. Schreurs; Bart Nauwelaers; Davide Resca; Giorgio Vannini

doi:10.1016/B978-0-12-401700-9.00008-2

Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design

Manuel Yarlequé, Dominique M.M.P. Schreurs, Bart Nauwelaers, Davide Resca, Giorgio Vannini

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Scopus citations

Abstract

This chapter aims to describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a three-dimensional (3D) physical model of the network and its electromagnetic (EM) analysis. The electromagnetic behavior is obtained employing 3D EM solvers and internal ports. In the first part, the de-embedding processes for field-effect transistor (FET) devices to be used for monolithic microwave integrated circuit designs are studied by four different approaches; in the second part of this chapter, the de-embedding of FET devices for hybrid circuit design purposes is described.

Original language	English
Title of host publication	Microwave De-embedding
Subtitle of host publication	From Theory to Applications
Publisher	Elsevier Ltd
Pages	317-383
Number of pages	67
ISBN (Print)	9780124017009
DOIs	https://doi.org/10.1016/B978-0-12-401700-9.00008-2
State	Published - Nov 2013

Keywords

Distributed modeling
Electromagnetic de-embedding
FETs
Nonlinear modeling
Power amplifier design

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10.1016/B978-0-12-401700-9.00008-2

Cite this

@inbook{22dd8c8d5c804e7d92ffc7fb02113ae6,

title = "Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design",

abstract = "This chapter aims to describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a three-dimensional (3D) physical model of the network and its electromagnetic (EM) analysis. The electromagnetic behavior is obtained employing 3D EM solvers and internal ports. In the first part, the de-embedding processes for field-effect transistor (FET) devices to be used for monolithic microwave integrated circuit designs are studied by four different approaches; in the second part of this chapter, the de-embedding of FET devices for hybrid circuit design purposes is described.",

keywords = "Distributed modeling, Electromagnetic de-embedding, FETs, Nonlinear modeling, Power amplifier design",

author = "Manuel Yarlequ{\'e} and Schreurs, {Dominique M.M.P.} and Bart Nauwelaers and Davide Resca and Giorgio Vannini",

year = "2013",

month = nov,

doi = "10.1016/B978-0-12-401700-9.00008-2",

language = "English",

isbn = "9780124017009",

pages = "317--383",

booktitle = "Microwave De-embedding",

publisher = "Elsevier Ltd",

}

TY - CHAP

T1 - Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design

AU - Yarlequé, Manuel

AU - Schreurs, Dominique M.M.P.

AU - Nauwelaers, Bart

AU - Resca, Davide

AU - Vannini, Giorgio

PY - 2013/11

Y1 - 2013/11

N2 - This chapter aims to describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a three-dimensional (3D) physical model of the network and its electromagnetic (EM) analysis. The electromagnetic behavior is obtained employing 3D EM solvers and internal ports. In the first part, the de-embedding processes for field-effect transistor (FET) devices to be used for monolithic microwave integrated circuit designs are studied by four different approaches; in the second part of this chapter, the de-embedding of FET devices for hybrid circuit design purposes is described.

AB - This chapter aims to describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a three-dimensional (3D) physical model of the network and its electromagnetic (EM) analysis. The electromagnetic behavior is obtained employing 3D EM solvers and internal ports. In the first part, the de-embedding processes for field-effect transistor (FET) devices to be used for monolithic microwave integrated circuit designs are studied by four different approaches; in the second part of this chapter, the de-embedding of FET devices for hybrid circuit design purposes is described.

KW - Distributed modeling

KW - Electromagnetic de-embedding

KW - FETs

KW - Nonlinear modeling

KW - Power amplifier design

UR - http://www.scopus.com/inward/record.url?scp=84903802586&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-401700-9.00008-2

DO - 10.1016/B978-0-12-401700-9.00008-2

M3 - Chapter

AN - SCOPUS:84903802586

SN - 9780124017009

SP - 317

EP - 383

BT - Microwave De-embedding

PB - Elsevier Ltd

ER -

Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design

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Keywords

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