Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering

K. Y. Tucto Salinas; L. F. Flores Escalante; J. A. Guerra Torres; R. Grieseler; T. Kups; J. Pezoldt; A. Osvet; M. Batentschuk; R. Weingärtner

doi:10.4028/www.scientific.net/MSF.890.299

Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb³⁺thin films prepared by radio frequency magnetron sputtering

K. Y. Tucto Salinas, L. F. Flores Escalante, J. A. Guerra Torres, R. Grieseler, T. Kups, J. Pezoldt, A. Osvet, M. Batentschuk, R. Weingärtner

Sección de Física

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.

Original language	English
Title of host publication	Material Science and Engineering Technology V
Editors	Yunqiu He, Ramesh K. Agarwal, Jean-Jacques Delaunay
Publisher	Trans Tech Publications Ltd
Pages	299-302
Number of pages	4
ISBN (Print)	9783035710281
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.890.299
State	Published - 2017
Event	5th International Conference on Material Science and Engineering Technology, ICMSET 2016 - Tokyo, Japan Duration: 29 Oct 2016 → 31 Oct 2016

Publication series

Name	Materials Science Forum
Volume	890 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	5th International Conference on Material Science and Engineering Technology, ICMSET 2016
Country/Territory	Japan
City	Tokyo
Period	29/10/16 → 31/10/16

Keywords

Aluminum nitride
Cathodoluminescence
Photoluminescence excitation
Rare earths
Terbium
Wide bandgap semiconductor

Access to Document

10.4028/www.scientific.net/MSF.890.299

Cite this

Tucto Salinas, K. Y., Flores Escalante, L. F., Guerra Torres, J. A., Grieseler, R., Kups, T., Pezoldt, J., Osvet, A., Batentschuk, M., & Weingärtner, R. (2017). Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb³⁺thin films prepared by radio frequency magnetron sputtering. In Y. He, R. K. Agarwal, & J.-J. Delaunay (Eds.), Material Science and Engineering Technology V (pp. 299-302). (Materials Science Forum; Vol. 890 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.890.299

Tucto Salinas, K. Y. ; Flores Escalante, L. F. ; Guerra Torres, J. A. et al. / Effect of post-annealing treatment on the structure and luminescence properties of AIN : Tb³⁺thin films prepared by radio frequency magnetron sputtering. Material Science and Engineering Technology V. editor / Yunqiu He ; Ramesh K. Agarwal ; Jean-Jacques Delaunay. Trans Tech Publications Ltd, 2017. pp. 299-302 (Materials Science Forum).

@inproceedings{4cbe1b76719c4a5a862ad284baccdbae,

title = "Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering",

abstract = "Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.",

keywords = "Aluminum nitride, Cathodoluminescence, Photoluminescence excitation, Rare earths, Terbium, Wide bandgap semiconductor",

author = "{Tucto Salinas}, {K. Y.} and {Flores Escalante}, {L. F.} and {Guerra Torres}, {J. A.} and R. Grieseler and T. Kups and J. Pezoldt and A. Osvet and M. Batentschuk and R. Weing{\"a}rtner",

note = "Publisher Copyright: {\textcopyright} 2017 Trans Tech Publications, Switzerland.; 5th International Conference on Material Science and Engineering Technology, ICMSET 2016 ; Conference date: 29-10-2016 Through 31-10-2016",

year = "2017",

doi = "10.4028/www.scientific.net/MSF.890.299",

language = "English",

isbn = "9783035710281",

series = "Materials Science Forum",

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}

Tucto Salinas, KY, Flores Escalante, LF, Guerra Torres, JA , Grieseler, R, Kups, T, Pezoldt, J, Osvet, A, Batentschuk, M & Weingärtner, R 2017, Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb³⁺thin films prepared by radio frequency magnetron sputtering. in Y He, RK Agarwal & J-J Delaunay (eds), Material Science and Engineering Technology V. Materials Science Forum, vol. 890 MSF, Trans Tech Publications Ltd, pp. 299-302, 5th International Conference on Material Science and Engineering Technology, ICMSET 2016, Tokyo, Japan, 29/10/16. https://doi.org/10.4028/www.scientific.net/MSF.890.299

Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb³⁺thin films prepared by radio frequency magnetron sputtering. / Tucto Salinas, K. Y.; Flores Escalante, L. F.; Guerra Torres, J. A. et al.
Material Science and Engineering Technology V. ed. / Yunqiu He; Ramesh K. Agarwal; Jean-Jacques Delaunay. Trans Tech Publications Ltd, 2017. p. 299-302 (Materials Science Forum; Vol. 890 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Guerra Torres, J. A.

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AB - Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.

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KW - Cathodoluminescence

KW - Photoluminescence excitation

KW - Rare earths

KW - Terbium

KW - Wide bandgap semiconductor

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PB - Trans Tech Publications Ltd

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ER -

Tucto Salinas KY, Flores Escalante LF, Guerra Torres JA , Grieseler R, Kups T, Pezoldt J et al. Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb³⁺thin films prepared by radio frequency magnetron sputtering. In He Y, Agarwal RK, Delaunay JJ, editors, Material Science and Engineering Technology V. Trans Tech Publications Ltd. 2017. p. 299-302. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.890.299