Effect of nitrogen dilution in the optical properties of amorphous SiC thin films

Liz Montañez, J. Andrés Guerra, Francisco De Zela, Albrecht Winnaker, Roland Weingärtner

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effect of the nitrogen dilution on the optical and vibrational properties of amorphous silicon carbide (a-SiC) and silicon oxycarbide (a-SiCO) layers have been studied. The films were prepared by radio frequency (rf) reactive magnetron sputtering using an atmosphere mixture of argon (Ar) and nitrogen (N2). The oxygen (O2) was incorporated according to the base pressure used of each deposition process. The optical and vibrational properties of the films were characterized by means of UV/VIS transmittance measurements and Fourier transform infrared spectroscopy (FTIR), respectively. A relationship between the variation of the optical bandgap and the increase or quench of vibrational modes is established. This analysis reveals that the increase of nitrogen in both host matrices a-SiC and a-SiCO induced the formation of C=N and C≡N bonds thus reducing the bandgap of the material.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages217-220
Number of pages4
ISBN (Print)9783038354789
DOIs
StatePublished - 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 21 Sep 201425 Sep 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Country/TerritoryFrance
CityGrenoble
Period21/09/1425/09/14

Keywords

  • FTIR
  • Optical bandgap
  • RF magnetron sputtering
  • Silicon carbide

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