Concentration quenching of tb3+ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements

J. A. Guerra; F. Benz; L. Montañez; R. Grieseler; P. Schaaf; F. De Zela; A. Winnacker; H. P. Strunk; R. Weingärtner

doi:10.1557/opl.2013.768

Concentration quenching of tb³⁺ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements

J. A. Guerra, F. Benz, L. Montañez, R. Grieseler, P. Schaaf, F. De Zela, A. Winnacker, H. P. Strunk, R. Weingärtner

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a systematic study of photo- and cathodoluminescence measurements in the visible of Terbium doped SiC:H and AlN thin films. The Terbium atomic concentrations vary from 0.9 to 10% for the SiC:H and from 0.8 to 6% for the AlN samples. For both materials the increase of the emission intensity with concentration and the subsequent quenching effect can be seen. The optimal concentration for the highest light emission is found. Photoluminescence excitation spectroscopy addresses the enhancement light emission mechanisms of the principal emission electronic transition of Terbium at ∼542 nm.

Original language	English
Title of host publication	Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics
Publisher	Materials Research Society
Pages	1-6
Number of pages	6
ISBN (Print)	9781632661524
DOIs	https://doi.org/10.1557/opl.2013.768
State	Published - 2013
Event	2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 1 Apr 2013 → 5 Apr 2013

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1571
ISSN (Print)	0272-9172

Conference

Conference	2013 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	1/04/13 → 5/04/13

Access to Document

10.1557/opl.2013.768

Cite this

Guerra, J. A., Benz, F., Montañez, L., Grieseler, R., Schaaf, P., De Zela, F., Winnacker, A., Strunk, H. P., & Weingärtner, R. (2013). Concentration quenching of tb³⁺ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements. In Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics (pp. 1-6). (Materials Research Society Symposium Proceedings; Vol. 1571). Materials Research Society. https://doi.org/10.1557/opl.2013.768

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title = "Concentration quenching of tb3+ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements",

abstract = "We present a systematic study of photo- and cathodoluminescence measurements in the visible of Terbium doped SiC:H and AlN thin films. The Terbium atomic concentrations vary from 0.9 to 10% for the SiC:H and from 0.8 to 6% for the AlN samples. For both materials the increase of the emission intensity with concentration and the subsequent quenching effect can be seen. The optimal concentration for the highest light emission is found. Photoluminescence excitation spectroscopy addresses the enhancement light emission mechanisms of the principal emission electronic transition of Terbium at ∼542 nm.",

author = "Guerra, {J. A.} and F. Benz and L. Monta{\~n}ez and R. Grieseler and P. Schaaf and {De Zela}, F. and A. Winnacker and Strunk, {H. P.} and R. Weing{\"a}rtner",

year = "2013",

doi = "10.1557/opl.2013.768",

language = "English",

isbn = "9781632661524",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "1--6",

booktitle = "Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics",

note = "2013 MRS Spring Meeting ; Conference date: 01-04-2013 Through 05-04-2013",

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Guerra, JA, Benz, F, Montañez, L, Grieseler, R, Schaaf, P, De Zela, F, Winnacker, A, Strunk, HP & Weingärtner, R 2013, Concentration quenching of tb³⁺ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements. in Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics. Materials Research Society Symposium Proceedings, vol. 1571, Materials Research Society, pp. 1-6, 2013 MRS Spring Meeting, San Francisco, CA, United States, 1/04/13. https://doi.org/10.1557/opl.2013.768

Concentration quenching of tb³⁺ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements. / Guerra, J. A.; Benz, F.; Montañez, L. et al.
Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics. Materials Research Society, 2013. p. 1-6 (Materials Research Society Symposium Proceedings; Vol. 1571).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Benz, F.

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AU - Grieseler, R.

AU - Schaaf, P.

AU - De Zela, F.

AU - Winnacker, A.

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AU - Weingärtner, R.

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AB - We present a systematic study of photo- and cathodoluminescence measurements in the visible of Terbium doped SiC:H and AlN thin films. The Terbium atomic concentrations vary from 0.9 to 10% for the SiC:H and from 0.8 to 6% for the AlN samples. For both materials the increase of the emission intensity with concentration and the subsequent quenching effect can be seen. The optimal concentration for the highest light emission is found. Photoluminescence excitation spectroscopy addresses the enhancement light emission mechanisms of the principal emission electronic transition of Terbium at ∼542 nm.

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Guerra JA, Benz F, Montañez L, Grieseler R, Schaaf P, De Zela F et al. Concentration quenching of tb³⁺ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements. In Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics. Materials Research Society. 2013. p. 1-6. (Materials Research Society Symposium Proceedings). doi: 10.1557/opl.2013.768