Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC: H and c -AlN thin films

J. Andres Guerra; Felix Benz; A. Ricardo Zanatta; Horst P. Strunk; Albrecht Winnacker; Roland Weingärtner

doi:10.1002/pssc.201200394

Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC: H and c -AlN thin films

J. Andres Guerra, Felix Benz, A. Ricardo Zanatta, Horst P. Strunk, Albrecht Winnacker, Roland Weingärtner

Grupo de Ciencia de Materiales y Energías Renovables

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Abstract

The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c -AlN) and amorphous hydrogenated silicon carbide (a -SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process

Original language	English
Pages (from-to)	68-71
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1002/pssc.201200394
State	Published - Jan 2013

Keywords

Concentration quenching
Terbium
Thermal activation

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title = "Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC: H and c -AlN thin films",

abstract = "The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c -AlN) and amorphous hydrogenated silicon carbide (a -SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process",

keywords = "Concentration quenching, Terbium, Thermal activation",

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T1 - Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC

T2 - H and c -AlN thin films

AU - Guerra, J. Andres

AU - Benz, Felix

AU - Zanatta, A. Ricardo

AU - Strunk, Horst P.

AU - Winnacker, Albrecht

AU - Weingärtner, Roland

PY - 2013/1

Y1 - 2013/1

N2 - The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c -AlN) and amorphous hydrogenated silicon carbide (a -SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process

AB - The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c -AlN) and amorphous hydrogenated silicon carbide (a -SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process

KW - Concentration quenching

KW - Terbium

KW - Thermal activation

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

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Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC: H and c -AlN thin films

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Keywords

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