Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

J. A. Guerra; K. Tucto; L. M. Montañez; F. De Zela; J. A. Töfflinger; A. Winnaker; R. Weingärtner

doi:10.1557/adv.2016.464

Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

J. A. Guerra
, K. Tucto
, L. M. Montañez
, F. De Zela
, J. A. Töfflinger
, A. Winnaker
, R. Weingärtner

University of Erlangen-Nürnberg
Pontifical Catholic Univ. of Peru

Research output: Contribution to journal › Article › peer-review

Abstract

The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb³⁺ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

Original language	English
Pages (from-to)	2689-2694
Number of pages	6
Journal	MRS Advances
Volume	1
Issue number	38
DOIs	https://doi.org/10.1557/adv.2016.464
State	Published - 2016

Keywords

Tb
amorphous
luminescence

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10.1557/adv.2016.464

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@article{0714db9b34684376be541001ad4ffc97,

title = "Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films",

abstract = "The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.",

keywords = "Tb, amorphous, luminescence",

author = "Guerra, \{J. A.\} and K. Tucto and Monta{\~n}ez, \{L. M.\} and \{De Zela\}, F. and T{\"o}fflinger, \{J. A.\} and A. Winnaker and R. Weing{\"a}rtner",

note = "Publisher Copyright: Copyright {\textcopyright} Materials Research Society 2016.",

year = "2016",

doi = "10.1557/adv.2016.464",

language = "English",

volume = "1",

pages = "2689--2694",

journal = "MRS Advances",

issn = "2059-8521",

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T1 - Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

AU - Guerra, J. A.

AU - Tucto, K.

AU - Montañez, L. M.

AU - De Zela, F.

AU - Töfflinger, J. A.

AU - Winnaker, A.

AU - Weingärtner, R.

PY - 2016

Y1 - 2016

N2 - The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

AB - The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

KW - Tb

KW - amorphous

KW - luminescence

UR - https://www.scopus.com/pages/publications/85041322534

U2 - 10.1557/adv.2016.464

DO - 10.1557/adv.2016.464

M3 - Article

AN - SCOPUS:85041322534

SN - 2059-8521

VL - 1

SP - 2689

EP - 2694

JO - MRS Advances

JF - MRS Advances

IS - 38

ER -

Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

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Keywords

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