Abstract
The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.
Original language | English |
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Pages (from-to) | 2689-2694 |
Number of pages | 6 |
Journal | MRS Advances |
Volume | 1 |
Issue number | 38 |
DOIs | |
State | Published - 2016 |
Keywords
- Tb
- amorphous
- luminescence