AlGaN based MEMS structures

Bernd Hähnlein, Katja Tonisch, Gernot Ecke, Rolf Grieseler, Steffen Michael, Peter Schaaf, Jörg Pezoldt

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

AlxGa1-xN solid solutions were heteroepitaxially grown on 3C-SiC(111)/Si(111) pseudo substrates fabricated by low pressure chemical vapour deposition. Free standing doubly-clamped resonator bars and cantilevers were fabricated from these AlxGa1-xN layers. The resonance frequencies of the microelectromechanical structures were measured using electrostatic excitation and vibrometry at ambient conditions. The obtained resonance frequencies allowed a self consistent determination of the Young's modulus of the AlxGa1-xN layers and the residual strain in the free standing structures.

Original languageEnglish
Pages (from-to)239-243
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number2
DOIs
StatePublished - Feb 2014
Externally publishedYes

Keywords

  • AlGaN alloy
  • Heteroepitaxy
  • MEMS
  • Stress
  • Youngs modulus

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