Abstract
AlxGa1-xN solid solutions were heteroepitaxially grown on 3C-SiC(111)/Si(111) pseudo substrates fabricated by low pressure chemical vapour deposition. Free standing doubly-clamped resonator bars and cantilevers were fabricated from these AlxGa1-xN layers. The resonance frequencies of the microelectromechanical structures were measured using electrostatic excitation and vibrometry at ambient conditions. The obtained resonance frequencies allowed a self consistent determination of the Young's modulus of the AlxGa1-xN layers and the residual strain in the free standing structures.
Original language | English |
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Pages (from-to) | 239-243 |
Number of pages | 5 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 11 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2014 |
Externally published | Yes |
Keywords
- AlGaN alloy
- Heteroepitaxy
- MEMS
- Stress
- Youngs modulus